SCD Diamond Wafers
Single Crystal CVD Diamond

Single Crystal
CVD Diamond Wafers

Single-crystal diamond plates and wafers bringing the ultimate thermal conductor into Wafer-Level Packaging and massive AI interposers.

Beyond Silicon. Beyond Scale.

Historical diamond wafers were limited to small sizes — useless for modern AI packaging. Our advanced CVD technology changes everything.

Standard and Wafer-Scale Formats

Standard rectangular plates ship today. Larger wafer-scale formats are available under qualification for selected partners.

>2200 W/m·K Thermal Conductivity

Single-crystal diamond delivers the highest thermal conductivity of any material — spreading hotspots evenly across entire substrates.

Epi-Ready Surface Option

An epi-ready surface option enables atomic-level direct bonding for GaN-on-Diamond and other advanced heterostructures.

Geometry and dimensions are partner-level

Sign in to see the standard geometries, surface-finish options, and thickness ranges for our SCD wafer line. Custom DFM is available for any footprint.

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Matched Parts & Applications

Engineered for Next-Gen AI Packaging

Our SCD wafers enable wafer-level packaging, GaN-on-Diamond integration, and extreme-power testing.

Monolithic AI Chip / GPU Interposers

2.5D/3D Advanced Packaging for AI accelerators

Contiguous SCD plates spread extreme localized heat (hotspots) from the GPU die evenly across the substrate, preventing thermal throttling and protecting adjacent HBM stacks.

Engineered Semiconductor Substrates

GaN-on-Diamond or Silicon-on-Diamond

The epi-ready surface option allows atomic-level direct bonding for massive arrays of RF or power chips with integrated diamond heat sinks.

Advanced Test Chucks & Probe Cards

Wafer-level testing of 1000W+ HPC chips

Prevents unpackaged semiconductor chips from self-destructing due to overheating during high-current fab testing, dramatically increasing yield rates.

GaN-on-Diamond

GaN-on-Diamond for CPO Laser Drivers

Gallium Nitride (GaN) on Diamond substrates are ideal for CPO laser driver ICs. GaN provides high electron mobility for high-frequency operation, while diamond provides extreme thermal conductivity to handle the heat load from dense laser arrays.

The standard form factor enables standard fab processing for GaN-on-Diamond heteroepitaxy, making it viable for high-volume CPO optical engine production.

GaN-on-Diamond Benefits for CPO

  • High-frequency operation for 200G SerDes laser drivers
  • Extreme thermal management for dense CW laser arrays
  • Standard form factor for volume production
  • Atomic-level surface finish for direct bonding

Standard dimensions are partner-level

Sign in to see the most frequently manufactured SCD configurations across rectangular plates and round wafers. Custom DFM is available for any geometry.

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Partner-only content

Sign in to see our extended-capability table (including current wafer-scale qualification) and to discuss Custom DFM for non-standard footprints.

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Tell us your target wafer or plate size

Tell us your target dimensions, surface-finish requirements, and quantity — we'll respond with a Custom DFM plan and a quote within 48 hours.